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Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry

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    0354476 - FZU-D 2011 RIV US eng J - Journal Article
    Olejník, Kamil - Wadley, P. - Haigh, J.A. - Edmonds, K. W. - Campion, R. P. - Rushforth, A.W. - Gallagher, B. L. - Foxon, C. T. - Jungwirth, Tomáš - Wunderlich, Joerg - Dhesi, S.S. - Cavill, S.A. - van der Laan, G. - Arenholz, E.
    Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal: Fe/(Ga,Mn)As bilayer films studied by XMCD measurements and SQUID magnetometry.
    Physical Review. B. Roč. 81, č. 10 (2010), 104402/1-104402/5 ISSN 1098-0121
    R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510
    EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : ferromagnetic semiconductors * exchange bias
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.772, year: 2010

    We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. The (Ga,Mn)As interface layer remains polarized at room temperature.
    Permanent Link: http://hdl.handle.net/11104/0193470