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Electric field induced anisotropy modification in (Ga,Mn)As: a strategy for the precessional switching of the magnetization
- 1.0354292 - FZÚ 2011 RIV US eng J - Journal Article
Balestriere, P. - Devolder, T. - Wunderlich, Joerg - Chappert, C.
Electric field induced anisotropy modification in (Ga,Mn)As: a strategy for the precessional switching of the magnetization.
Applied Physics Letters. Roč. 96, č. 14 (2010), 142504/1-142504/3. ISSN 0003-6951. E-ISSN 1077-3118
EU Projects: European Commission(XE) 214499 - NAMASTE
Institutional research plan: CEZ:AV0Z10100521
Keywords : magnetic semiconductors * spintronics
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.820, year: 2010
We propose a scheme for the precessional switching of the magnetization in the magnetic semiconductor (Ga,Mn)As using cubic anisotropy field reduction triggered by electric field and a small assisting magnetic field.
Permanent Link: http://hdl.handle.net/11104/0193330
Number of the records: 1