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Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors
- 1.0353864 - FZÚ 2011 RIV US eng J - Journal Article
Vašek, Petr - Svoboda, Pavel - Novák, Vít - Cukr, Miroslav - Výborný, Karel - Jurka, Vlastimil - Stuchlík, Jiří - Orlita, Milan - Maude, D. K.
Anisotropic magnetoresistance of GaMnAs ferromagnetic semiconductors.
Journal of Superconductivity and Novel Magnetism. Roč. 23, č. 6 (2010), 1161-1163. ISSN 1557-1939. E-ISSN 1557-1947
R&D Projects: GA AV ČR KAN400100652; GA MŠMT MEB020928
Grant - others:EU EuroMagNET II(XE) Egide 19535NF
Institutional research plan: CEZ:AV0Z10100521
Keywords : GaMnAs * anisotropic magnetoresistance * hydrogenation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.014, year: 2010
The angular dependence of the magnetoresistance has been studied for two sets of samples: annealed and hydrogenated, respectively. Differend behaviour of magnetoresistance anisotropy has been discussed in terms of change of scattering rate and/or introduction of stain during treatment.
Permanent Link: http://hdl.handle.net/11104/0192992
Number of the records: 1