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Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy
- 1.0353507 - FZÚ 2011 RIV GB eng J - Journal Article
Kučera, M. - Nitsch, Karel - Nikl, Martin - Hanuš, M.
Defects in Ce-doped LuAG and YAG scintillation layers grown by liquid phase epitaxy.
Radiation Measurements. Roč. 45, 3-6 (2010), s. 449-452. ISSN 1350-4487. E-ISSN 1879-0925
R&D Projects: GA AV ČR KAN300100802; GA ČR GA202/08/0893
Institutional research plan: CEZ:AV0Z10100521
Keywords : YAG * LuAG * Ce-doping garnet * liquid phase epitaxy * luminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.019, year: 2010
Epitaxial Lu3Al5O12 (LuAG) and Y3Al5O12 (YAG) garnet layers doped by Ce ions were grown by the liquid phase epitaxy. The effect of the flux composition, growth conditions, and substrate polishing on the layer morphology, creation of defects, and on optical and emission properties of layers was studied. The defects typical of the epitaxial growth are discussed.
Permanent Link: http://hdl.handle.net/11104/0192745
Number of the records: 1