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The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
- 1. 0353061 - UFCH-W 2011 RIV US eng J - Journal Article
Kalbáč, Martin - Reina-Cecco, A. - Farhat, H. - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene.
ACS Nano. Roč. 4, č. 10 (2010), s. 6055-6063 ISSN 1936-0851
R&D Projects: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠk ME09060; GA MŠk LC510; GA ČR GC203/07/J067; GA ČR GAP204/10/1677
Institutional research plan: CEZ:AV0Z40400503
Keywords : graphene * Raman spectroscopy * spectroelectrochemistry
Subject RIV: CG - Electrochemistry
Impact factor: 9.855, year: 2010
Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.
Permanent Link: http://hdl.handle.net/11104/0192407