The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition

0352722 - FZÚ 2011 RIV GB eng J - Journal Article
Červenka, Jiří - Ledinský, Martin - Stuchlík, Jiří - Stuchlíková, The-Ha - Bakardjieva, Snejana - Hruška, Karel - Fejfar, Antonín - Kočka, Jan
The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition.
Nanotechnology. Roč. 21, č. 41 (2010), 415604/1-415604/7. ISSN 0957-4484. E-ISSN 1361-6528
R&D Projects: GA MŠMT(CZ) LC06040; GA AV ČR KAN400100701; GA MŠMT LC510
EU Projects: European Commission(XE) 240826 - PolySiMode
Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z40320502
Keywords : nanoneedles * nanowires * silicon * plasma * chemical vapor deposition * crystal structure * growth * phonon * SEM * Raman
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.644, year: 2010

Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end.
Permanent Link: http://hdl.handle.net/11104/0192169