Electronic structure of defects in Sr.sub.2./sub.MgSi.sub.2./sub.O.sub.7./sub.:Eu.sup.2+./sup.,La.sup.3+./sup. persistent luminiscence material

0352705 - FZÚ 2011 RIV NL eng J - Journal Article
Hassinen, J. - Hölsä, J. - Laamanen, T. - Lastusaari, M. - Novák, Pavel
Electronic structure of defects in Sr₂MgSi₂O₇:Eu²⁺,La³⁺ persistent luminiscence material.
Journal of Non-Crystalline Solids. Roč. 356, 37-40 (2010), s. 2015-2019. ISSN 0022-3093. E-ISSN 1873-4812
Institutional research plan: CEZ:AV0Z10100521
Keywords : disilicate * persistent luminiscence * electronic structure
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.483, year: 2010
www.elsevier.com/locate/jnoncrysol

Modifications in the crystal and electronic structure due to the introduction of Sr and oxygen vacancies in Sr2MgSi2O7:Eu2+ were calculated using the density functional theory based method.
Permanent Link: http://hdl.handle.net/11104/0192156