Mapping of Dopants in Silicon by Injection of Electrons

0352508 - ÚPT 2011 RIV JP eng C - Conference Paper (international conference)
Hovorka, Miloš - Frank, Luděk
Mapping of Dopants in Silicon by Injection of Electrons.
Proceedings of 5th Japan-China-Norway Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology. Toyama: University of Toyama, 2010, s. 15-18. ISBN 978-4-9903248-2-7.
[JCNCS2010 /5./ Japan-China-Norway Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology. Toyama (JP), 12.09.2010-15.09.2010]
Institutional research plan: CEZ:AV0Z20650511
Keywords : semiconductors * dopant contrast * very low energy SEM
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

Mapping of the p-type dopant in an n-type silicon substrate was studied on a planar structure composed of variously sized doped patterns of various dopant densities. The traditional imaging by means of secondary electrons and its quantifiability was verified and the method was extended to the very low energy range.
Permanent Link: http://hdl.handle.net/11104/0192000