Semiconductor laser sources at 760 nm wavelength for nanometrology

0352185 - ÚPT 2011 RIV BG eng C - Conference Paper (international conference)
Mikel, Břetislav - Buchta, Zdeněk - Lazar, Josef - Číp, Ondřej
Semiconductor laser sources at 760 nm wavelength for nanometrology.
Proceedings of the 9th WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronic. Sofia: WSEAS EUROPMENT Press, 2010, s. 96-101. ISBN 978-954-92600-3-8. ISSN 1790-5117.
[WSEAS International Conference on Microelectronics, Nanoelectronics, Optoelectronic /9./. Catania (IT), 29.05.2010-31.10.2010]
R&D Projects: GA MPO 2A-1TP1/127; GA MŠMT ED0017/01/01; GA ČR GP102/09/P293; GA ČR GP102/09/P630
Institutional research plan: CEZ:AV0Z20650511
Keywords : laser interferometry * absolute measurement * tunable laser diodes
Subject RIV: BH - Optics, Masers, Lasers

Measurement with nanometer resolution is required for the next advance in nanotechnology. Especially the noncontacting methods of measurement are very .promising. We present the set-up of the laser interferometer with nanometer resolution. A stabilized laser source with the DFB (Distributed FeedBack) laser diode was developed and its realization was implemented to the laser interferometer. The output of the DFB laser source and the design of optical set-up of the laser interferometer are realized by fiber optics. It will improve repeatability of measuring by reducing the influence of the index of refraction of air. The measurement probe is realized by standard optical fiber with reflection coated optical connector. Due to using of the DFB laser source it is possible to measure of the length in incremental or absolute regime. The stability and the tunability of the wavelength of the laser source are crucial parameters to improve resolution and accuracy of the laser interferometer.
Permanent Link: http://hdl.handle.net/11104/0191758