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High frequency stability semiconductor laser sources at 760 nm wavelength

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    0350817 - ÚPT 2011 RIV US eng J - Journal Article
    Mikel, Břetislav - Buchta, Zdeněk - Lazar, Josef - Číp, Ondřej
    High frequency stability semiconductor laser sources at 760 nm wavelength.
    WSEAS Transactions on Circuits and Systems. Roč. 9, č. 10 (2010), s. 650-659. ISSN 1109-2734
    R&D Projects: GA MPO 2A-1TP1/127; GA MŠMT ED0017/01/01; GA ČR GP102/09/P293; GA ČR GP102/09/P630
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : absolute measurement * DFB laser diode * laser interferometry * tunable laser diodes * VCSEL laser diode
    Subject RIV: BH - Optics, Masers, Lasers

    Measurement with nanometer resolution is required for the next advance in nanotechnology. Especially the non contacting methods of measurement are very.promising. We present the set-up of the laser interferometer with nanometer resolution. We developed three types of laser sources especially for using in laser interferometry and absolute laser interferometry. The standard He-Ne laser source for conventional laser interferometry techniques can be replaced by one of these tree types of laser sources. We used Vertical Surface Emitting Laser (VCSEL) and Distributed Feed-Back (DFB) laser diodes to design these laser sources. For these laser diodes we developed several methods to improvement their wavelength stability and tunability by fiber Bragg gratings (FBGs). We developed simulation method to calculation of arbitrary fiber grating (apodized, chirp etc.) with high precision by combination of methods based on layered dielectric media (LDM) and transfer matrix.
    Permanent Link: http://hdl.handle.net/11104/0190718

     
     
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