Imaging of dopants under presence of surface ad-layers

0350664 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
Mika, Filip - Hovorka, Miloš - Frank, Luděk
Imaging of dopants under presence of surface ad-layers.
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 35-36. ISBN 978-80-254-6842-5.
[International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
R&D Projects: GA ČR GP102/09/P543
Institutional research plan: CEZ:AV0Z20650511
Keywords : scanning electron microscopy * semiconductor structures * image contrast * dopant concentration * secondary electron emission
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://arl-repository.lib.cas.cz/uloziste_av/UPT-D/cav_un_epca-0350664_01.pdf

Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast between differently doped areas is observable in the secondary electron emission. Quantitative relation exists between the image contrast and the dopant concentration. However, further examination has shown the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of ad-layers on the semiconductor surface.
Permanent Link: http://hdl.handle.net/11104/0190604