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Mapping of dopants by electron injection
- 1.0350658 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk
Mapping of dopants by electron injection.
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 15-16. ISBN 978-80-254-6842-5.
[International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : silicon structures * secondary electron emission * very low energy range * mapping dopants
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://arl-repository.lib.cas.cz/uloziste_av/UPT-D/cav_un_epca-0350658_01.pdf
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
Permanent Link: http://hdl.handle.net/11104/0190598
Number of the records: 1