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Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection
- 1.0350311 - ÚFE 2011 RIV NL eng J - Journal Article
Matuchová, M. - Žďánský, Karel - Zavadil, Jiří - Tonn, J. - Mousa, M. - Dinilewsky, A. N. - Croll, A. - Maixner, J.
Influence of doping and non-stoichiometry on the quality of lead iodide for use in X-ray detection.
Journal of Crystal Growth. Roč. 312, č. 8 (2010), s. 1233-1239. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR(CZ) KAN401220801
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor devices * doping * detectors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.737, year: 2010
Lead iodide crystals were synthesized with stoichiometric composition and with an excess of iodine or lead. Some crystals were doped by Ag, Au, Ge and a number of rare-earth elements (RE). HRXRD, EBSD, electrical resistivity, low temperature PL and optical transmittance confirm good crystal quality. Stoichiometric composition or low excess of lead give the best quality crystals. Doping with Ag leads to considerable decrease of electrical resistivity. RE doping generally leads to decrease of optical gap.
Permanent Link: http://hdl.handle.net/11104/0190346
Number of the records: 1