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On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument
- 1.0349994 - ÚFE 2011 RIV NL eng J - Journal Article
Williams, P. - Franzreb, K. - Sobers Jr., R. C. - Lorinčík, Jan
On the effect of oxygen flooding on the detection of noble gas ions in a SIMS instrument.
Nuclear Instruments & Methods in Physics Research Section B. Roč. 268, 17-18 (2010), s. 2758-2765. ISSN 0168-583X. E-ISSN 1872-9584
Institutional research plan: CEZ:AV0Z20670512
Keywords : SIMS * noble gases * uranium
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.042, year: 2010
We have investigated the report by Desgranges and Pasquet (2004) [1] that O2 gas flooding in a secondary ion mass spectrometer could enhance by a factor of about ~5 the Xe+ ion yield for a Xe implant in UO2 sputtered by O2+ primary ions. For a Xe implant in Si sputtered by O2+ primary ions and for Xe+ sputtering of silicon in steady state, O2 gas flooding reduced the Xe+ ion signal by a factor of about 2, presumably due to loss of Xe+ by resonant charge exchange with gas-phase oxygen molecules. The yield of a Kr co-implant in Si was unaffected by oxygen flooding. However, we demonstrate that for steady-state Ar+ sputtering of uranium, the Ar+ ion yield can be increased by a factor of ~1.7 by oxygen flooding.
Permanent Link: http://hdl.handle.net/11104/0190104
Number of the records: 1