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Room temperature particle detectors based on indium phosphide
- 1.0349841 - ÚFE 2011 RIV NL eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Pekárek, Ladislav
Room temperature particle detectors based on indium phosphide.
Nuclear Instruments & Methods in Physics Research Section A. Roč. 612, č. 2 (2010), s. 334-337. ISSN 0168-9002. E-ISSN 1872-9576
R&D Projects: GA AV ČR KJB200670901; GA AV ČR(CZ) KAN401220801; GA ČR(CZ) GP102/08/P617
Institutional research plan: CEZ:AV0Z20670512
Keywords : Particle detector * Semi-insulating InP * High purity InP layers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.142, year: 2010
A study of electrical properties and detection performance of particle detectors based on bulk InP and semiconducting LPE layers operated at room temperature is presented. Bulk detectors were fabricated on semi-insulating InP crystals grown by liquid encapsulated Czochralski (LEC) technique. High purity InP layers of both n- and p-type conductivity were used to fabricate detector structures with p–n junction. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from 241Am source at room temperature. Better noise properties were achieved for detectors with p–n junctions due to better quality contacts on p-type layers.
Permanent Link: http://hdl.handle.net/11104/0189978
Number of the records: 1