Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface

0349319 - FZÚ 2011 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Hubík, Pavel - Gombia, E. - Zat'ko, B. - Kindl, Dobroslav - Dubecký, M. - Boháček, P.
Anomalous charge current transport in semi-insulatingGaAs with a new contact metallization: Influence of 2DEG formed at the M-S interface.
SURFINT-SREN II. Bratislava: Comenius University, 2010 - (Brunner, R.), s. 19-22. ISBN 978-80-223-2723-7.
[Progress in Applied Surface, Interface and Thin Film Science 2009. Florence (IT), 16.11.2009-19.11.2009]
R&D Projects: GA ČR GA202/07/0525
Institutional research plan: CEZ:AV0Z10100521
Keywords : SI-GaAs * X-ray detectors * charge transport * metallization
Subject RIV: BM - Solid Matter Physics ; Magnetism

Radiation detector structures made of semiinsulating GaAs were prepared with a new kind of low-work function metallization. I-V curves were measured in different geometries of both top and bottom contacts. Anomalous decrease of the reverse current observed for Mg and Gd contacts is discussed.
Permanent Link: http://hdl.handle.net/11104/0189588