Ab initio study of one-dimensional disorder on III-V semiconductor surfaces

0349214 - FZÚ 2011 RIV DE eng J - Journal Article
Romanyuk, Olexandr - Grosse, F. - Braun, W.
Ab initio study of one-dimensional disorder on III-V semiconductor surfaces.
Physica Status Solidi C. Roč. 7, č. 2 (2010), s. 330-333. ISSN 1862-6351
R&D Projects: GA AV ČR KAN300100802
Grant - others:German Resarch Fondation(DE) GZ:436 TSE 113/62/0-1
Institutional research plan: CEZ:AV0Z10100521
Keywords : atomic disorder * ab initio * semiconductor * reconstruction
Subject RIV: BM - Solid Matter Physics ; Magnetism

Atomic disorder on GaSb(001) and GaAs(001) surfaces is studied by ab initio calculations within density functional theory (DFT). Surface energies are computed for GaSb(001)and GaAs(001) reconstructions. Deviations in bond lengths due to disorder with respect to the ordered ground state phases are calculated.
Permanent Link: http://hdl.handle.net/11104/0189514