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Growth and characterization of YAG and LuAG epitaxial films for scintillation applications
- 1.0349166 - FZÚ 2011 RIV NL eng J - Journal Article
Kučera, M. - Nitsch, Karel - Nikl, Martin - Hanus, M. - Daniš, S.
Growth and characterization of YAG and LuAG epitaxial films for scintillation applications.
Journal of Crystal Growth. Roč. 312, č. 9 (2010), s. 1538-1545. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA AV ČR KAN300100802
Institutional research plan: CEZ:AV0Z10100521
Keywords : luminescence * liquid phase epitaxy * Ce doping * YAG * LuAG * scintillator materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.737, year: 2010
The epitaxial films of Ce3+-doped yttrium and lutetium aluminum garnets, Y3Al5O12 and Lu3Al5O12, were grown by the liquid phase epitaxy from fluxes of various compositions, i.e. PbO–B2O3, BaO–BaF2– B2O3, and MoO3–Li2MoO4. Growth, film morphology, and structural, optical and emission properties of the films were studied.
Permanent Link: http://hdl.handle.net/11104/0189477
Number of the records: 1