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Radiation emission from wrinkled SiGe/SiGe nanostructure
- 1.0349035 - ÚT 2011 RIV US eng J - Journal Article
Fedorchenko, Alexander I. - Cheng, H. H. - Sun, G. - Soref, R. A.
Radiation emission from wrinkled SiGe/SiGe nanostructure.
Applied Physics Letters. Roč. 96, č. 11 (2010), s. 113104-113107. ISSN 0003-6951. E-ISSN 1077-3118
Institutional research plan: CEZ:AV0Z20760514
Keywords : SiGe wrinkled nanostructures * si-based optical emitter * synchrotron radiation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.820, year: 2010
http://apl.aip.org/resource/1/applab/v96/i11/p113104_s1?isAuthorized=no
Semiconductor optical emitters radiate light via band-to-band optical transitions. Here, a different mechanism of radiation emission, which is not related to the energy band of the materials, is proposed. In the case of carriers traveling along a sinusoidal trajectory through a wrinkled nanostructure, radiation was emitted via changes in their velocity in a manner analogous to synchrotron radiation. The radiated frequency of wrinkled SiGe/SiGe nanostructure was found to cover a wide spectrum with radiation power levels of the order of submilliwatts. Thus, this nanostructure can be used as a Si-based optical emitter and it will enable the integration of optoelectronic devices on a wafer.
Permanent Link: http://hdl.handle.net/11104/0189379
Number of the records: 1