Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

0348989 - ÚJF 2011 RIV GB eng J - Journal Article
Trunec, D. - Zajíčková, L. - Bursíková, V. - Studnička, F. - Sťahel, P. - Prysiazhnyi, V. - Peřina, Vratislav - Houdková, Jana - Navrátil, Z. - Franta, D.
Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge.
Journal of Physics D-Applied Physics. Roč. 43, č. 22 (2010), 225403/1-225403/8. ISSN 0022-3727. E-ISSN 1361-6463
Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521
Keywords : GLOW-DISCHARGE * CHEMICAL-STRUCTURE * PLASMA
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 2.105, year: 2010

An atmospheric pressure dielectric barrier discharge burning in nitrogen with a small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, and the substrate temperature during the deposition process was increased up to values within the range 25-150 degrees C in order to obtain hard SiOx-like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterized by the Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and the depth sensing indentation technique. It was found that the films' properties depend significantly on the substrate temperature at deposition.
Permanent Link: http://hdl.handle.net/11104/0189349