Germanium nanowires prepared from (SiMe3)3GeH and (GeMe3)2

0346639 - ÚACH 2011 RIV VE eng J - Journal Article
Šubrt, Jan - Dřínek, Vladislav - Fajgar, Radek - Klementová, Mariana
Germanium nanowires prepared from (SiMe3)3GeH and (GeMe3)2.
Acta Microscopica. Roč. 18, Supp C (2009), s. 77-78. ISSN 0798-4545.
[Inter-American Congress on Electron Microscopy 2009 /10./. Rosario, 25.10.2009-28.10.2009]
R&D Projects: GA ČR GA203/09/1088
Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40720504
Keywords : germanium * silicon
Subject RIV: CF - Physical ; Theoretical Chemistry

Germanium and silicon are semiconductors produced industrially on a large scale.Some advantages in the electronic structure and production technology boosted up silicon in the electronic component industry.
Permanent Link: http://hdl.handle.net/11104/0187609