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GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS
- 1.0346104 - ÚFE 2011 RIV CZ eng C - Conference Paper (international conference)
Yatskiv, Roman - Grym, Jan - Žďánský, Karel - Pekárek, Ladislav - Zavadil, Jiří
GROWTH OF InP CRYSTALS WITH RARE-EARTH ELEMENTS.
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM). NEW YORK: IEE, 2009, s. 91-93. International Conference on Indium Phosphide and Related Materials. ISBN 978-1-4244-3432-9. ISSN 1092-8669.
[21st International Conference on Indium Phosphide and Related Materials. Newport Beach (US), 10.05.2009-14.05.2009]
R&D Projects: GA AV ČR KJB200670901; GA ČR(CZ) GP102/08/P617; GA AV ČR KAN400670651
Institutional research plan: CEZ:AV0Z20670512
Keywords : Rare-earth elements * Crystals growth * InP
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
We report on the influence of rare earth (RE) elements (Pr, Er, and Dy) addition during vertical Bridgman low pressure synthesis on the properties of InP crystals. The temperature dependent Hall measurement and low temperature photoluminescence (PL) spectroscopy were employed to study the changes in electrical and optical properties of the crystals. The observed changes are attributed to the gettering effect of REs caused by the high affinity of REs towards shallow impurities in InP.
Permanent Link: http://hdl.handle.net/11104/0187213
Number of the records: 1