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Giant inelastic tunneling in epitaxial graphene mediated by localized states

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    0343359 - FZÚ 2011 RIV US eng J - Journal Article
    Červenka, Jiří - van der Ruit, K. - Flipse, C.F.J.
    Giant inelastic tunneling in epitaxial graphene mediated by localized states.
    Physical Review. B. Roč. 81, č. 20 (2010), 205403/1-205403/5. ISSN 1098-0121
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : graphene * silicon carbide * scanning tunneling microscopy * inelastic electron tunneling spectroscopy * phonons
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.772, year: 2010

    Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.
    Permanent Link: http://hdl.handle.net/11104/0185858

     
     
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