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Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure

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    0342469 - FZÚ 2011 RIV US eng J - Journal Article
    Khorsand, A.R. - Sobierajski, R. - Louis, E. - Bruijn, S. - van Hattum, E.D. - van de Kruijs, R.W.E. - Jurek, M. - Klinger, D. - Pelka, J. B. - Juha, Libor - Burian, Tomáš - Chalupský, Jaromír - Cihelka, Jaroslav - Hájková, Věra - Vyšín, Luděk - Jastrow, U. - Stojanovic, N. - Toleikis, S. - Wabnitz, H. - Tiedtke, K. - Sokolowski-Tinten, K. - Shymanovich, U. - Krzywinski, J. - Hau-Riege, S. - London, R. - Gleeson, A. - Gullikson, E.M. - Bijkerk, F.
    Single shot damage mechanism of Mo/Si multilayer optics under intense pulsed XUV-exposure.
    Optics Express. Roč. 18, č. 2 (2010), 700-712. ISSN 1094-4087
    R&D Projects: GA AV ČR KAN300100702; GA MŠMT LC510; GA MŠMT(CZ) LC528; GA MŠMT LA08024; GA AV ČR IAA400100701
    Institutional research plan: CEZ:AV0Z10100523
    Keywords : laser damage * thermal effects * multilayers * optical design and fabrication * free-electron lasers
    Subject RIV: BH - Optics, Masers, Lasers
    Impact factor: 3.749, year: 2010

    We investigated single shot damage of Mo/Si multilayer coatings exposed to the intense fs XUV radiation at the Free-electron LASer facility in Hamburg - FLASH. The interaction process was studied in situ by XUV reflectometry, time resolved optical microscopy, and "post-mortem" by interference-polarizing optical microscopy (with Nomarski contrast), atomic force microscopy, and scanning transmission electron microcopy. An ultrafast molybdenum silicide formation due to enhanced atomic diffusion in melted silicon has been determined to be the key process in the damage mechanism. The influence of the energy diffusion on the damage process was estimated. The results are of significance for the design of multilayer optics for a new generation of pulsed (from atto- to nanosecond) XUV sources.
    Permanent Link: http://hdl.handle.net/11104/0185200

     
     
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