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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

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    0342123 - FZU-D 2011 RIV RU eng J - Journal Article
    Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
    Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
    Semiconductors. Roč. 44, č. 1 (2010), 66-71 ISSN 1063-7826
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 0.603, year: 2010

    Luminescent characteristics of asymmetric p-InAs/AlSb/InAsSb/AlSb/p-GaSb type II heterostructures with deep quantum wells at the heterointerface grown by MOVPE are studied. Intense positive and negative luminescence was observed in the range of photon energies of 0.3-0.4 eV with a forward and reverse bias, respectively. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3-4 μm.
    Permanent Link: http://hdl.handle.net/11104/0184942