Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes

0341918 - ÚPT 2011 RIV JP eng J - Journal Article
Schauer, F. - Schauer, Petr - Kuřitka, I. - Hua, B.
Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes.
Materials Transactions. Roč. 51, č. 2 (2010), s. 197-201. ISSN 1345-9678. E-ISSN 1347-5320
R&D Projects: GA AV ČR IAA100100622
Institutional research plan: CEZ:AV0Z20650511
Keywords : ultra violet degradability * polysilylenes * weak bond * conformation defect * nanorezists
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.779, year: 2010

The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400–600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists.
Permanent Link: http://hdl.handle.net/11104/0184761