Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

0341441 - ÚFE 2010 RIV NL eng J - Journal Article
Vaniš, Jan - Zelinka, Jiří - Malina, Václav - Henini, M. - Pangrác, Jiří - Melichar, Karel - Hulicius, Eduard - Šroubek, Filip - Walachová, Jarmila
Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE.
Microelectronics Journal. Roč. 40, č. 3 (2009), s. 496-498. ISSN 0026-2692. E-ISSN 1879-2391
R&D Projects: GA ČR GA202/05/0242
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521; CEZ:AV0Z10750506
Keywords : quantum dots * ballistic transport * semiconductor heterojunction
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.778, year: 2009

Self-assembled InAs quantum dots (SAQDs) in GaAs/GaAlAs structures grown by molecular beam epitaxy (MBE) and metal-organic vapour phase epitaxy (MOVPE) of similar size was examined by ballistic electron emission spectroscopy. Ballistic current-voltage characteristics through the QD in the voltage range from 0.55 to 0.9 V (range where the presence of resonance states of QD is expected) with its derivative (the derivation of the spectroscopic characteristics represents quantum levels in the QD) are given. Differences in the intensities and sharpnesses of the QD levels for MBE and MOVPE grown QDs are observed.
Permanent Link: http://hdl.handle.net/11104/0184437