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Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling
- 1.0341424 - ÚPT 2010 RIV US eng J - Journal Article
Kettle, J. - Whitelegg, S. - Song, M. - Madec, M. B. - Yeates, S. - Turner, M. L. - Kotačka, L. - Kolařík, Vladimír
Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling.
Journal of Vacuum Science & Technology B. Roč. 27, č. 6 (2009), s. 2801-2804. ISSN 1071-1023
R&D Projects: GA ČR GA102/05/2325
Institutional research plan: CEZ:AV0Z20650511
Keywords : argon * milling * nanolithography * organic semiconductors * semiconductor diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.460, year: 2009
In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range.
Permanent Link: http://hdl.handle.net/11104/0184421
Number of the records: 1