On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films

0341419 - ÚACH 2010 RIV NL eng J - Journal Article
Gutwirth, J. - Wágner, T. - Bezdička, Petr - Hrdlička, M. - Vlček, Milan - Frumar, M.
On angle resolved RF magnetron sputtering of Ge-Sb-Te thin films.
Journal of Non-Crystalline Solids. Roč. 355, 37-42 (2009), s. 1935-1938. ISSN 0022-3093. E-ISSN 1873-4812
R&D Projects: GA MŠMT LC523; GA ČR GA203/06/1368
Institutional research plan: CEZ:AV0Z40320502; CEZ:AV0Z40500505
Keywords : amorphous semiconductors * films and coatings * sputtering
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.252, year: 2009

Thin amorphous films of Ge-Sb-Te were deposited from Ge2Sb2Te5 target by RF (f=13.56 MHz) magnetron sputtering in argon plasma. Composition and chemical homogeneity of target and prepared thin films were traced by Energy Dispersive X-ray Analysis coupled with Scanning Electron Microscope (SEM-EDX). SEM technique was also used for surface morphology observation. Crystallinity of target and prepared thin films was studied by X-ray Diffraction (XRD). Optical parameters of prepared thin films (spectral dependence of refractive index, optical band gap energy E-g(opt)) and film thicknesses were established via Variable Angle Spectroscopic Ellipsometry (VASE) supported by UV-Vis-NIR spectroscopy. Influence of deposition conditions (RF power, At pressure, angle divergency from normal direction) to composition, crystallinity, optical properties and deposition rate was established.
Permanent Link: http://hdl.handle.net/11104/0184416