Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts

0341232 - ÚFE 2010 RIV DE eng J - Journal Article
Šrobár, Fedor - Procházková, Olga
Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts.
Crystal Research and Technology. Roč. 44, č. 6 (2009), s. 597-602. ISSN 0232-1300. E-ISSN 1521-4079
R&D Projects: GA ČR GA102/09/1037; GA ČR GA102/06/0153
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.896, year: 2009

Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work.
Permanent Link: http://hdl.handle.net/11104/0184282