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Structure, electrical, optical and thermal properties of Ge4Sb4Tex(x=8,9 and10) thin films
- 1.0340236 - ÚMCH 2010 RIV NL eng J - Journal Article
Přikryl, J. - Hrdlička, M. - Frumar, M. - Orava, J. - Beneš, L. - Vlček, Milan - Kostal, P. - Hromádko, T. - Wágner, T.
Structure, electrical, optical and thermal properties of Ge4Sb4Tex(x=8,9 and10) thin films.
Journal of Non-Crystalline Solids. Roč. 355, 37-42 (2009), s. 1998-2002. ISSN 0022-3093. E-ISSN 1873-4812.
[International Symposium on Non-Oxide and New Optical Glasses. Montpellier, 20.04.2008-25.04.2008]
R&D Projects: GA ČR GA203/06/0627
Keywords : chalcogenide thin films * crystallization
Subject RIV: CA - Inorganic Chemistry
Impact factor: 1.252, year: 2009
The crystalline samples were prepared and their amorphous semiconducting thin films obtained by flash evaporation. The films were crystallized by a short laser pulses or slowly by annealing. The electrical and optical properties of layers prepared were measured.
Permanent Link: http://hdl.handle.net/11104/0183523
Number of the records: 1