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Decomposition of mixed phase silicon Raman spectra
- 1.0339516 - FZÚ 2010 RIV US eng C - Conference Paper (international conference)
Ledinský, Martin - Stuchlík, Jiří - Vetushka, Aliaksi - Fejfar, Antonín - Kočka, Jan
Decomposition of mixed phase silicon Raman spectra.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology — 2009. Warrendale, PA: Materials Research Society, 2009 - (Flewitt, A.; Wang, Q.; Hou, J.; Uchikoga, S.; Nathan, A.), s. 15-20. Material Research Society Symposium Proceedings, 1153. ISBN 978-1-60511-126-1.
[MRS spring meating 2009. San Francisco, CA (US), 13.04.2009-17.04.2009]
R&D Projects: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510
Institutional research plan: CEZ:AV0Z10100521
Keywords : Raman spectroscopy * silicon thin films * photovoltaics
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://www.mrs.org/s_mrs/sec_subscribe.asp?TrackID=FVBMVC5NCPA3LSSGPWPGMZURP3UMFBBT&CID=18437&DID=243429
Series of Raman spectra were measured for microcrystalline silicon thin film with variable crystallinity. Five sets of Raman spectra (corresponding to excitations at 325 nm, 442 nm, 514.5 nm, 632.8 nm and 785 nm wavelengths) were subjected to factor analysis which showed that each set of spectra consisted of just two independent spectral components. Decomposition of the measured Raman spectra into the amorphous and the microcrystalline components is illustrated for 514.5 nm and 632.8 nm excitations. Effect of the light scattering on absolute intensity of Raman spectra was identified even for excitation wavelength highly absorbed in the mixed phase silicon layers.
Permanent Link: http://hdl.handle.net/11104/0183023
Number of the records: 1