Number of the records: 1
Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles
- 1.0337620 - FZÚ 2010 RIV UA eng J - Journal Article
Goncharuk, Natalya - Kučera, Jan - Smrčka, Ludvík
Pre-edge XANES structure of Mn in (Ga,Mn)As from first principles.
[Pre-edge XANES struktura Mn v (Ga,Mn)As vypočtená z prvních principů.]
Chemistry of Metals and Alloys. Roč. 2, 1-2 (2009), s. 34-38. ISSN 1998-8079
R&D Projects: GA MŠMT LC510; GA AV ČR KAN400100652
Institutional research plan: CEZ:AV0Z10100521
Keywords : (Ga,Mn)As magnetic semiconductor * X-ray absorption near-edge structure * substitutional * interstitial / * defects
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://www.chemetal-journal.org/
The X-ray absorption near-edge structure (XANES) at the Mn K-edge in the (Ga,Mn)As magnetic semiconductor was simulated using the full potential linearized augmented plane wave (FLAPW) method including the core-hole effect. The calculations were performed in the supercell scheme for a substitutional and two tetrahedral interstitial Mn sites.
Struktura pre-edge XANESů manganu v (Ga,Mn)As magnetickém polovodiči byla simulovana pomocí FLAPW metody se započtením core-hole efektu. Výpočty byly provedeny v supercelách se substitučním a dvěma tetrahedralními intersticiálními polohami atomů Mn.
Permanent Link: http://hdl.handle.net/11104/0181571
Number of the records: 1