Number of the records: 1
Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control
- 1.0337207 - FZÚ 2010 RIV US eng J - Journal Article
Riester, S.W.E. - Stolichnov, I. - Trodahl, H.J. - Setter, N. - Rushforth, A.W. - Edmonds, K. W. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Jungwirth, Tomáš
Toward a low-voltage multiferroic transistor: magnetic (Ga,Mn)As under ferroelectric control.
[Multiferoický transistor ovládaný slabým elektrickým polem: Magnetický (Ga,Mn)As ovládaný feroelektrickou vrstvou.]
Applied Physics Letters. Roč. 94, č. 6 (2009), 063504/1-063504/3. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
EU Projects: European Commission(XE) 214499 - NAMASTE; European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100521
Keywords : Curie temperature * dielectric polarisation * erroelectric devices * ferroelectric materials * insulated gate field effect tran
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.554, year: 2009
http://link.aip.org/link/?APL/94/063504
We have fabricated and studied experimentallz and theoretically a new type of a spintronic transistor with GaMnAs channel and ferroelectric gate electrode.
Zkonstruovali jsme a experimentálně a teoreticky studovali nový typ spintronického transistoru GaMnAs vodivým kanálem a feroelektrickým hradlem.
Permanent Link: http://hdl.handle.net/11104/0181263
Number of the records: 1