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LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition
- 1.0336628 - FZÚ 2010 RIV CH eng J - Journal Article
Stuchlík, Jiří - Ledinský, Martin - Honda, Shinya - Drbohlav, Ivo - Mates, Tomáš - Fejfar, Antonín - Hruška, Karel - Stuchlíková, The-Ha - Kočka, Jan
LiF enhanced nucleation of the low temperature microcrystalline silicon prepared by plasma enhanced chemical vapour deposition.
Thin Solid Films. Roč. 517, č. 24 (2009), s. 6829-6832. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA AV ČR KAN400100701; GA ČR(CZ) GD202/05/H003; GA MŠMT LC510; GA AV ČR IAA1010413
Institutional research plan: CEZ:AV0Z10100521
Keywords : amorphous hydrogenated silicon * atomic force microscopy * plasma-enhanced chemical vapour deposition, * nucleation * Raman scattering * lithium fluoride
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.727, year: 2009
Lithium fluoride (Lif) thin film evaporated on glass substrate is shown to enhance the nucleation of microcrystalline Si grown by plasma enhanced chemical vapour deposition at the amorphous/microcrystalline boundary conditions.
Permanent Link: http://hdl.handle.net/11104/0180823
Number of the records: 1