Interaction of intense ultrashort XUV pulses with silicon

0335956 - FZÚ 2010 RIV US eng C - Conference Paper (international conference)
Sobierajski, R. - Klinger, D. - Jurek, M. - Pelka, J. B. - Juha, Libor - Chalupský, Jaromír - Cihelka, Jaroslav - Hájková, Věra - Vyšín, Luděk - Jastrow, U. - Stojanovic, N. - Toleikis, S. - Wabnitz, H. - Krzywinski, J. - Hau-Riege, S. - London, R.
Interaction of intense ultrashort XUV pulses with silicon.
[Interakce intenzivních ultra-krátkých XUV pulzů s křemíkem.]
Damage to VUV, EUV, and X-ray Optics II. Bellingham: SPIE, 2009 - (Juha, L.; Bajt, S.; Sobierajski, R.), 736107/1-736107/11. Proceedings of SPIE, 7361. ISBN 9780819476357. ISSN 0277-786x.
[Damage to VUV, EUV, and X-Ray Optics II. Prague (CZ), 21.04.2009-23.04.2009]
R&D Projects: GA AV ČR KAN300100702; GA MŠMT LC510; GA MŠMT(CZ) LC528; GA MŠMT LA08024; GA AV ČR IAA400100701
Institutional research plan: CEZ:AV0Z10100523
Keywords : radiation damage * amorphization * ablation * monocrystalline silicon * soft x-ray free-electron laser
Subject RIV: BH - Optics, Masers, Lasers
http://dx.doi.org/10.1117/12.822152

Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg, which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described.

V této práci shrnujeme výsledky interakčních experimentů, jejichž objektem je objemový vzorek monokrystalického křemíku ozářený fokusovaným svazkem laseru s volnými elektrony FLASH naladěným na vlnovou délku 32,5 nm.
Permanent Link: http://hdl.handle.net/11104/0180297