The origin and control of the sources of AMR in (Ga,Mn)As devices

0335861 - FZÚ 2010 RIV NL eng J - Journal Article
Rushforth, A.W. - Výborný, Karel - King, C.S. - Edmonds, K. W. - Campion, R. P. - Foxon, C. T. - Wunderlich, J. - Irvine, A.C. - Novák, Vít - Olejník, Kamil - Kovalev, A.A. - Sinova, J. - Jungwirth, Tomáš - Gallagher, B. L.
The origin and control of the sources of AMR in (Ga,Mn)As devices.
[Příčiny a způsob ovládání AMR v součástkách z (Ga,Mn)As.]
Journal of Magnetism and Magnetic Materials. Roč. 321, č. 8 (2009), s. 1001-1008. ISSN 0304-8853. E-ISSN 1873-4766
R&D Projects: GA MŠMT LC510; GA AV ČR KAN400100652; GA ČR GEFON/06/E002; GA ČR GA202/05/0575; GA ČR GA202/04/1519
EU Projects: European Commission(XE) 015728 - NANOSPIN
Institutional research plan: CEZ:AV0Z10100521
Keywords : ferromagnetic semiconductor * anisotropic magnetoresistance
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.204, year: 2009

We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. Simple analytical model of the non-crystalline AMR is derived.

Popisujeme experimentalni metody, ktere poskytuji primy pristup k jednotlivym slozkam AMR (krystalicke a nekrystalicke). Je odvozen jednoduchy analyticky model nekrystalicke AMR.
Permanent Link: http://hdl.handle.net/11104/0180215