Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes

0335299 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
Schauer, F. - Schauer, Petr - Kuřitka, I. - Hua, B.
Conjugated Silicon – Based Polymer Resists for Nanotechnologies: EB and UV Mediated Degradation Processes in Polysilanes.
Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09). Brno: ISI AS CR, 2009 - (Pokorná, Z.; Mika, F.), s. 28. ISBN 978-80-254-4535-8.
[CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./. Brno (CZ), 10.08.2009-14.08.2009]
Institutional research plan: CEZ:AV0Z20650511
Keywords : photoluminescence * cathodoluminescence * silicon-based polymer resist
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in long wavelength range 400 - 600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process.
Permanent Link: http://hdl.handle.net/11104/0179805