Profiling of N-Type Dopants in Silicon Based Structures

0335293 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
Hovorka, Miloš - Mika, Filip - Frank, Luděk - Mikulík, P.
Profiling of N-Type Dopants in Silicon Based Structures.
Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09). Brno: ISI AS CR, 2009 - (Pokorná, Z.; Mika, F.), s. 14. ISBN 978-80-254-4535-8.
[CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./. Brno (CZ), 10.08.2009-14.08.2009]
R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : n-type substrate * SEM * PEEM * doping levels
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering

We have focused on variously doped n-type pattems on a lightly doped p-type substrate because of lack of data for these structures. We have designed and prepared planar structures of this kind at the university clean room. Combination of the UHV SEM and PEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and explanation of their contrast with respect to the p-type substrate. In addition to the SEM observations at very low energies (down to the units of eV), we performed the laterally resolved threshold and soft X-ray spectroscopies in a PEEM equipped with an energy filter.
Permanent Link: http://hdl.handle.net/11104/0179799