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Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE
- 1.0335271 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
Mikmeková, Eliška - Janča, J. - Dvořáková, M.
Influence of process parameters on the properties of TEOS DF-PECVD grown SiO2 films by DOE.
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 3: 463-464. ISBN 978-3-85125-062-6.
[MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
Institutional research plan: CEZ:AV0Z20650511
Keywords : DF-PECVD * silicon dioxide * intrinsic stress * DOE * SEM
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://www.univie.ac.at/asem/Graz_MC_09/papers/65557.pdf
The aim of this work is to optimize deposition process for thin silicon dioxide films preparation and to study the influence of stress in these films.
Permanent Link: http://hdl.handle.net/11104/0179780
Number of the records: 1