Secondary electron contrast in doped semiconductor with presence of a surface ad-layer

0335263 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
Mika, Filip - Hovorka, Miloš - Frank, Luděk
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer.
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 199-200. ISBN 978-3-85125-062-6.
[MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : dopant contrast * secondary electrons * semiconductor
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf

The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface.
Permanent Link: http://hdl.handle.net/11104/0179773