Profiling of N-type dopants in silicon structures

0335261 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
Hovorka, Miloš - Mika, Filip - Frank, Luděk
Profiling of N-type dopants in silicon structures.
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 181-182. ISBN 978-3-85125-062-6.
[MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
Institutional research plan: CEZ:AV0Z20650511
Keywords : silicon * dopants * PEEM * SEM
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
http://www.univie.ac.at/asem/Graz_MC_09/papers/19923.pdf

Among the dopant profiling techniques the scanning electron microscopy (SEM) reached position of a well established method which offers a high spatial resolution and good sensitivity to dopant concentration. Differently doped areas exhibit a contrast depending on the dopant level and surface conditions. Photoemission electron microscopy (PEEM) is a surface-sensitive alternative providing a high sensitivity to the dopant density. Both methods have already been successfully applied in imaging and characterization of the doped silicon structures.
Permanent Link: http://hdl.handle.net/11104/0179772