Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation

0334092 - FZÚ 2010 RIV US eng J - Journal Article
Hau-Riege, S.P. - London, R.A. - Bionta, R.M. - Ryutov, D. - Soufli, R. - Bajt, S. - McKernan, M.A. - Baker, S. L. - Krzywinski, J. - Sobierajski, R. - Nietubyc, R. - Klinger, D. - Pelka, J. B. - Jurek, M. - Juha, Libor - Chalupský, Jaromír - Cihelka, Jaroslav - Hájková, Věra - Velyhan, Andriy - Krása, Josef - Tiedtke, K. - Toleikis, S. - Wabnitz, H. - Bergh, M. - Caleman, C. - Timneanu, N.
Wavelength dependence of the damage threshold of inorganic materials under extreme-ultraviolet free-electron-laser irradiation.
[Závislost prahu poškození anorganických materiálů ozářených XUV laserem s volnými elektrony.]
Applied Physics Letters. Roč. 95, č. 11 (2009), 111104/1-111104/3. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA AV ČR KAN300100702; GA MŠMT LC510; GA MŠMT(CZ) LC528; GA MŠMT LA08024; GA AV ČR IAA400100701
Institutional research plan: CEZ:AV0Z10100523
Keywords : damage threshold * silicon carbide * boron carbide * soft X-ray free-electron laser
Subject RIV: BH - Optics, Masers, Lasers
Impact factor: 3.554, year: 2009

We exposed bulk SiC and films of SiC and B4C to single 25 fs long free-electron-laser pulses with wavelengths between 13.5 and 32 nm. The materials are candidates for x-ray free-electron laser optics. We found that the threshold for surface-damage of the bulk SiC samples exceeds the fluence required for thermal melting at all wavelengths. The damage threshold of the film sample shows a strong wavelength dependence. For wavelengths of 13.5 and 21.7 nm, the damage threshold is equal to or exceeds the melting threshold, whereas at 32 nm the damage threshold falls below the melting threshold.

Abychom stanovili prahy radiačního poškození objemového vzorku SiC a tenkých vrstev SiC a B4C ozářili jsme je jednotlivými 25-fs pulzy záření s vlnovou délkou 13,5 a 32 nm. Zdrojem záření byl laser s volnými elektrony FLASH.
Permanent Link: http://hdl.handle.net/11104/0178918