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Homogenization of CZ Si wafers by Tabula Rasa annealing
- 1.0332842 - ÚFM 2010 RIV NL eng J - Journal Article
Meduňa, M. - Caha, O. - Kuběna, J. - Kuběna, A. - Buršík, Jiří
Homogenization of CZ Si wafers by Tabula Rasa annealing.
Physica B-Condensed Matter. Roč. 404, - (2009), s. 4637-4640. ISSN 0921-4526. E-ISSN 1873-2135
R&D Projects: GA ČR(CZ) GA202/09/1013
Institutional research plan: CEZ:AV0Z20410507
Keywords : silicon * interstitial oxygen * oxygen precipitates
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.056, year: 2009
The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, TEM and X-ray diffraction after application of homogenization annealing process called Tabula Rasa.
Permanent Link: http://hdl.handle.net/11104/0177972
Number of the records: 1