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Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond
- 1.0331690 - FZÚ 2010 RIV DE eng J - Journal Article
Šopík, Břetislav
Model for the boron-doping dependence of the critical temperature of superconducting boron-doped diamond.
[Model závislosti kritické teploty na míře neuspořádanosti u supravodivého bórem dopovaného diamantu.]
New Journal of Physics. Roč. 11, č. 10 (2009), 103026/1-103026/10. ISSN 1367-2630. E-ISSN 1367-2630
R&D Projects: GA AV ČR IAA100100712
Grant - others:GAČR(CZ) GA202/07/0597
Institutional research plan: CEZ:AV0Z10100521
Keywords : superconductivity * boron-doped diamond
Subject RIV: BE - Theoretical Physics
Impact factor: 3.312, year: 2009
Study of the concentration dependence of the superconducting critical temperature Tc in a boron-doped diamond. The simplified Belitz theory is used and the density of states at Fermi level is evaluated within the dynamical cluster approximation.
Studie závislosti kritické teploty Tc supravodivého přechodu na koncentraci příměsí v bórem dopovaném diamantu. V modelu je použita Belitzova teorie, hustota stavů na Fermiho mezi N0 je spočtena pomocí dynamical cluster approximation.
Permanent Link: http://hdl.handle.net/11104/0177140
Number of the records: 1