Number of the records: 1  

Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As

  1. 1.
    0312859 - FZÚ 2009 RIV DE eng J - Journal Article
    De Ranieri, E. - Rushforth, A.W. - Výborný, Karel - Rana, U. - Ahmad, E. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Irvine, A.C. - Wunderlich, J. - Jungwirth, Tomáš
    Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As.
    [Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As.]
    New Journal of Physics. Roč. 10, č. 6 (2008), 065003/1-065003/19. ISSN 1367-2630. E-ISSN 1367-2630
    R&D Projects: GA MŠMT LC510; GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : anomalous Hall effect * Keldysh formalism * Rashba system
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 3.440, year: 2008

    We demonstrate experimentally that lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. Complete phenomenological AMR expressions are derived and new higher order terms are reported in experiments.

    Experimentálně je ukázáno, ze litograficky nebo elektricky ovládané mechanické deformace v (Ga,Mn)As dávají vzniknout velmi silným krystalickým komponentám AMR. Jsou odvozeny úplné fenomenologické vzorce pro AMR.
    Permanent Link:

Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.