0312859 - FZÚ 2009 RIV DE eng J - Journal Article
De Ranieri, E. - Rushforth, A.W. - Výborný, Karel - Rana, U. - Ahmad, E. - Campion, R. P. - Foxon, C. T. - Gallagher, B. L. - Irvine, A.C. - Wunderlich, J. - Jungwirth, Tomáš
Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As.
[Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As.]
New Journal of Physics. Roč. 10, č. 6 (2008), 065003/1-065003/19. ISSN 1367-2630. E-ISSN 1367-2630
R&D Projects: GA MŠMT LC510; GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
Institutional research plan: CEZ:AV0Z10100521
Keywords : anomalous Hall effect * Keldysh formalism * Rashba system
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.440, year: 2008
DOI: https://doi.org/10.1088/1367-2630/10/6/065003

We demonstrate experimentally that lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. Complete phenomenological AMR expressions are derived and new higher order terms are reported in experiments.

Experimentálně je ukázáno, ze litograficky nebo elektricky ovládané mechanické deformace v (Ga,Mn)As dávají vzniknout velmi silným krystalickým komponentám AMR. Jsou odvozeny úplné fenomenologické vzorce pro AMR.
Permanent Link: http://hdl.handle.net/11104/0163813