0304285 - URE-Y 20040054 RIV NL eng J - Journal Article
Franzreb, K. - Williams, P. - Lörinčík, Jan - Šroubek, Zdeněk
Doubly versus singly positively charged oxygen ions back-scattered from a silicon surface under dynamic O₂⁺ bombardment.
Applied Surface Science. 203-204, - (2003), s. 39-42. ISSN 0169-4332. E-ISSN 1873-5584
Grant - others:KONTAKT National Science Foundation(XE) CHE-0091328
Institutional research plan: CEZ:AV0Z2067918
Keywords : ionisation * sputtering
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.284, year: 2003

The investigation is described of an apparent bombarding energy threshold for formation of O++ backscattered from silion surface under O2 bombardment. From the experiment it is deduced that O++ is formed in asymmetric _{_}Si-O collision via collisional double ionization of oxygen 2p inner shells.
Permanent Link: http://hdl.handle.net/11104/0003150