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Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors
- 1.0304201 - URE-Y 20030073 ES eng A - Abstract
Procházková, Olga - Zavadil, Jiří - Grym, Jan - Žďánský, Karel
Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors.
Badajoz: FORMATEX, 2003. Book of Abstracts 1st International Meeting on Applied Physics. s. 201
[APHYS-2003 /1./. 13.10.2003-18.10.2003, Badajoz]
R&D Projects: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043
Institutional research plan: CEZ:AV0Z2067918
Keywords : rare earth compounds * photoluminescence * Hall effect
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
The preparation and characterization of thick InP layers by LPE with admixture of Ce, Tb, Dy and Yb is reported. Measaurement of temperature dependent Hall effect, C-V characteristics and photoluminescence spectra show the change of n-p type conductivity and considerable improvement of structural and electro-optical parameters for all studied rare-earth elements. Mn was identified as dominant acceptor impurity in the case of Tb and Dy addition. In the case of Ce and Yb the dominant acceptor was identified as isoelectronic Ce or Yb on the In site.
Permanent Link: http://hdl.handle.net/11104/0114342
Number of the records: 1