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The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers
- 1.0303870 - URE-Y 20010052 PL eng A - Abstract
Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers.
Warsaw: Polish Academy of Sciences, Institute of Physics, 2001. Jaszowiec 2001. s. 59
[International School on the Physics of Semiconducting Compounds /30./. 01.06.2001-08.06.2001, Ustron-Jaszowiec]
R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
Institutional research plan: CEZ:AV0Z2067918
Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
The behaviour and the impact of individual rare-earth elements (REE) used in the InP LPE growth process were compared. Structural, electrical and optical properties of InP layers exhibit a significant dependence on the presentace of REE. The dislocation density was reduced by a half order of magnitude. The concentration of shallow impurities was reduced by up to three orders of magnitude. When increasing the concentration of Pr or Tb in the growth melt the reversal of electrical conductivity occurs.
Permanent Link: http://hdl.handle.net/11104/0114054
Number of the records: 1