Charge-coupled device area detector for low energy electrons

0205623 - UPT-D 20030005 RIV US eng J - Journal Article
Horáček, Miroslav
Charge-coupled device area detector for low energy electrons.
Review of Scientific Instruments. Roč. 74, č. 7 (2003), s. 3379 - 3384. ISSN 0034-6748. E-ISSN 1089-7623
R&D Projects: GA ČR GA102/00/P001
Institutional research plan: CEZ:AV0Z2065902
Keywords : low energy electrons * charged-coupled device * detector
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.343, year: 2003

A fast position-sensitive detector was designed for the angle- and energy-selective detection of signal electrons in the scanning low energy electron microscope (SLEEM), based on a thinned back-side directly electron-bombarded charged-coupled device (CCD) sensor (EBCCD). The principle of the SLEEM operation and the motivation for the development of the detector are explained. The electronics of the detector is described as well as the methods used for the measurement of the electron-bombarded gain and of the dark signal. The EBCCD gain of 565 for electron energy 5 keV and dynamic range 59 dB for short integration time up to 10 ms at room temperature were obtained. The energy dependence of EBCCD gain and the detection efficiency are presented for electron energy between 2 and 5 keV, and the integration time dependence of the output signals under dark conditions is given for integration time from 1 to 500 ms.
Permanent Link: http://hdl.handle.net/11104/0101236